A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 μm SiGe:C BiCMOS
نویسندگان
چکیده
Bernhard Goll*, David J. Thomson, Lars Zimmermann, Henri Porte, Frederic Y. Gardes, Youfang Hu, Dieter Knoll, Stefan Lischke, Bernd Tillack, Graham T. Reed and Horst Zimmermann 1 Institute of Electrodynamics, Microwave and Circuit Engineering (EMCE), Vienna University of Technology, Vienna, Austria 2 Optoelectronics Research Centre (ORC), University of Southampton, Southampton, UK 3 IHP, Im Technologiepark, Frankfurt (Oder), Germany 4 Photline Technologies, Besancon, France
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